SML801R4BN Todos los transistores

 

SML801R4BN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML801R4BN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 240 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Id|ⓘ - Corriente continua de drenaje: 8.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO247

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SML801R4BN datasheet

 9.1. Size:19K  semelab
sml80t27.pdf pdf_icon

SML801R4BN

SML80T27 T247clip Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE 5.38 (0.212) 6.20 (0.244) HIGH VOLTAGE POWER MOSFETS 2 VDSS 800V 1 2 3 2.87 (0.113) ID(cont) 27A 0.40 (0.016) 3.12 (0.123) 0.79 (0.031) 1.65 (0.065) 2.13 (0.084) RDS(on) 0.300 1.01 (0.040) 1.40 (0.055

 9.2. Size:25K  semelab
sml80b13f.pdf pdf_icon

SML801R4BN

SML80B13F TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.650 2.2

 9.3. Size:26K  semelab
sml80h14.pdf pdf_icon

SML801R4BN

SML80H14 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 800V ID(cont) 13.5A RDS(on) 0.580 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower

 9.4. Size:20K  semelab
sml80l27 sml80l27f.pdf pdf_icon

SML801R4BN

SML80L27 TO 264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 800V 1 2 3 2.29 (0.090) ID(cont) 27A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.300 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0.051)

Otros transistores... SML60T38, SML60W32, SML7516DFN, SML8016DFN, SML801R2AN, SML801R2BN, SML801R2CN, SML801R4AN, IRF530, SML801R4CN, SML802R4AN, SML802R4BN, SML802R4CN, SML802R4GN, SML802R4KN, SML802R8AN, SML802R8BN

 

 

 


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