R6030KNZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6030KNZ1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 305 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 56 nC
Tiempo de subida (tr): 75 nS
Conductancia de drenaje-sustrato (Cd): 2000 pF
Resistencia entre drenaje y fuente RDS(on): 0.13 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de MOSFET R6030KNZ1
R6030KNZ1 Datasheet (PDF)
r6030knz1.pdf
R6030KNZ1DatasheetNch 600V 30A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.130 TO-247ID30APD 305W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA
r6030knz1.pdf
isc N-Channel MOSFET Transistor R6030KNZ1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
r6030knz.pdf
R6030KNZDatasheetNch 600V 30A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.130 TO-3PFID30APD 86W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp
r6030knz.pdf
isc N-Channel MOSFET Transistor R6030KNZFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6030knx.pdf
R6030KNXDatasheetNch 600V 30A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.130 TO-220FMID30APD 86W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub
r6030knx.pdf
isc N-Channel MOSFET Transistor R6030KNXFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: OSG65R080HT3ZF | TPW65R100MFD
