R6030MNX Todos los transistores

 ..1. Size:2472K  rohm
 r6030mnx.pdf

R6030MNX Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.150 TO-220FM ID 30A PD 90W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Pb-free p

 ..2. Size:252K  inchange semiconductor
 r6030mnx.pdf

isc N-Channel MOSFET Transistor R6030MNX FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 150m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:864K  rohm
 r6030enz1.pdf

R6030ENZ1 Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.130W ID 30A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

 9.2. Size:2178K  rohm
 r6030knz.pdf

R6030KNZ Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-3PF ID 30A PD 86W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lApp

 9.3. Size:824K  rohm
 r6030enx.pdf

R6030ENX Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.130W ID 30A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 20V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

 9.4. Size:1641K  rohm
 r6030knx.pdf

R6030KNX Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-220FM ID 30A PD 86W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub

 9.5. Size:892K  rohm
 r6030enz.pdf

R6030ENZ Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.130W ID 30A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

 9.6. Size:2166K  rohm
 r6030knz1.pdf

R6030KNZ1 Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-247 ID 30A PD 305W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lA

 9.7. Size:303K  inchange semiconductor
 r6030enz1.pdf

isc N-Channel MOSFET Transistor R6030ENZ1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.8. Size:266K  inchange semiconductor
 r6030knz.pdf

isc N-Channel MOSFET Transistor R6030KNZ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.9. Size:252K  inchange semiconductor
 r6030enx.pdf

isc N-Channel MOSFET Transistor R6030ENX FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.10. Size:252K  inchange semiconductor
 r6030knx.pdf

isc N-Channel MOSFET Transistor R6030KNX FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.11. Size:265K  inchange semiconductor
 r6030enz.pdf

isc N-Channel MOSFET Transistor R6030ENZ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.12. Size:304K  inchange semiconductor
 r6030knz1.pdf

isc N-Channel MOSFET Transistor R6030KNZ1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp