R6515KNX Todos los transistores

 ..1. Size:1839K  rohm
 r6515knx.pdf

R6515KNX Datasheet Nch 650V 15A Power MOSFET lOutline l VDSS 650V RDS(on)(Max.) 0.315 TO-220FM ID 15A PD 60W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub

 ..2. Size:251K  inchange semiconductor
 r6515knx.pdf

isc N-Channel MOSFET Transistor R6515KNX FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 315m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.1. Size:1370K  rohm
 r6515knj.pdf

R6515KNJ Datasheet Nch 650V 15A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.315 ID 15A PD 184W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packi

 7.2. Size:2112K  rohm
 r6515knz.pdf

R6515KNZ Datasheet Nch 650V 15A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.315 ID 15A PD 60W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packin

 7.3. Size:255K  inchange semiconductor
 r6515knj.pdf

isc N-Channel MOSFET Transistor R6515KNJ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 315m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.4. Size:265K  inchange semiconductor
 r6515knz.pdf

isc N-Channel MOSFET Transistor R6515KNZ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 315m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo