R6524KNJ Todos los transistores

 ..1. Size:1377K  rohm
 r6524knj.pdf

R6524KNJ Datasheet Nch 650V 24A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.185 ID 24A PD 245W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packi

 ..2. Size:255K  inchange semiconductor
 r6524knj.pdf

isc N-Channel MOSFET Transistor R6524KNJ FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 185m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.1. Size:1849K  rohm
 r6524knx.pdf

R6524KNX Datasheet Nch 650V 24A Power MOSFET lOutline l VDSS 650V RDS(on)(Max.) 0.185 TO-220FM ID 24A PD 74W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub

 7.2. Size:2129K  rohm
 r6524knz.pdf

R6524KNZ Datasheet Nch 650V 24A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.185 ID 24A PD 74W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packin

 7.3. Size:2229K  rohm
 r6524knx1.pdf

R6524KNX1 Datasheet Nch 650V 24A Power MOSFET lOutline l TO-220AB VDSS 650V RDS(on)(Max.) 0.185 ID 24A PD 253W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Pa

 7.4. Size:252K  inchange semiconductor
 r6524knx.pdf

isc N-Channel MOSFET Transistor R6524KNX FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 185m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.5. Size:265K  inchange semiconductor
 r6524knz.pdf

isc N-Channel MOSFET Transistor R6524KNZ FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 185m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.6. Size:261K  inchange semiconductor
 r6524knx1.pdf

isc N-Channel MOSFET Transistor R6524KNX1 FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 185m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp