R6524KNX1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

R6524KNX1DatasheetNch 650V 24A Power MOSFETlOutlinel TO-220ABVDSS 650VRDS(on)(Max.) 0.185ID 24APD 253W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pa

isc N-Channel MOSFET Transistor R6524KNX1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

R6524KNXDatasheetNch 650V 24A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.185 TO-220FMID24APD 74W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

isc N-Channel MOSFET Transistor R6524KNXFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

R6524KNJDatasheetNch 650V 24A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.185ID 24APD 245W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

R6524KNZDatasheetNch 650V 24A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.185ID 24APD 74W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

isc N-Channel MOSFET Transistor R6524KNJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor R6524KNZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo