R6530KNZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

R6530KNZ1DatasheetNch 650V 30A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.140ID 30APD 305W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

isc N-Channel MOSFET Transistor R6530KNZ1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

R6530KNZDatasheetNch 650V 30A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.140ID 30APD 86W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

isc N-Channel MOSFET Transistor R6530KNZFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

R6530KNX1DatasheetNch 650V 30A Power MOSFETlOutlinel TO-220ABVDSS 650VRDS(on)(Max.) 0.140ID 30APD 307W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pa

R6530KNXDatasheetNch 650V 30A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.140 TO-220FMID30APD 86W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

isc N-Channel MOSFET Transistor R6530KNX1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor R6530KNXFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo