R6530KNZ1 Todos los transistores

 

R6530KNZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R6530KNZ1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 305 W

Tensión drenaje-fuente |Vds|: 650 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 5 V

Carga de compuerta (Qg): 56 nC

Tiempo de elevación (tr): 90 nS

Conductancia de drenaje-sustrato (Cd): 2200 pF

Resistencia drenaje-fuente RDS(on): 0.14 Ohm

Empaquetado / Estuche: TO-247

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R6530KNZ1 Datasheet (PDF)

0.1. r6530knz1.pdf Size:2341K _rohm

R6530KNZ1
R6530KNZ1

R6530KNZ1DatasheetNch 650V 30A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.140ID 30APD 305W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

0.2. r6530knz1.pdf Size:304K _inchange_semiconductor

R6530KNZ1
R6530KNZ1

isc N-Channel MOSFET Transistor R6530KNZ1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. r6530knz.pdf Size:2344K _rohm

R6530KNZ1
R6530KNZ1

R6530KNZDatasheetNch 650V 30A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.140ID 30APD 86W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

6.2. r6530knz.pdf Size:266K _inchange_semiconductor

R6530KNZ1
R6530KNZ1

isc N-Channel MOSFET Transistor R6530KNZFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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