R6530KNZ1 Datasheet. Equivalente

 ..1. Size:2341K  rohm
 r6530knz1.pdf

R6530KNZ1 Datasheet Nch 650V 30A Power MOSFET lOutline l TO-247 VDSS 650V RDS(on)(Max.) 0.140 ID 30A PD 305W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Pack

 ..2. Size:304K  inchange semiconductor
 r6530knz1.pdf

isc N-Channel MOSFET Transistor R6530KNZ1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:2344K  rohm
 r6530knz.pdf

R6530KNZ Datasheet Nch 650V 30A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.140 ID 30A PD 86W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packin

 6.2. Size:266K  inchange semiconductor
 r6530knz.pdf

isc N-Channel MOSFET Transistor R6530KNZ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.1. Size:2376K  rohm
 r6530knx1.pdf

R6530KNX1 Datasheet Nch 650V 30A Power MOSFET lOutline l TO-220AB VDSS 650V RDS(on)(Max.) 0.140 ID 30A PD 307W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Pa

 7.2. Size:1985K  rohm
 r6530knx.pdf

R6530KNX Datasheet Nch 650V 30A Power MOSFET lOutline l VDSS 650V RDS(on)(Max.) 0.140 TO-220FM ID 30A PD 86W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub

 7.3. Size:262K  inchange semiconductor
 r6530knx1.pdf

isc N-Channel MOSFET Transistor R6530KNX1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 7.4. Size:252K  inchange semiconductor
 r6530knx.pdf

isc N-Channel MOSFET Transistor R6530KNX FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo