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R6547ENZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: R6547ENZ1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 480 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 150 nC
   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 4000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO-247

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R6547ENZ1 Datasheet (PDF)

 ..1. Size:2055K  rohm
r6547enz1.pdf

R6547ENZ1
R6547ENZ1

R6547ENZ1DatasheetNch 650V 47A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.080ID 47APD 480WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6547ENZ1 Basic ordering unit (

 ..2. Size:303K  inchange semiconductor
r6547enz1.pdf

R6547ENZ1
R6547ENZ1

isc N-Channel MOSFET Transistor R6547ENZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:2038K  rohm
r6547knz1.pdf

R6547ENZ1
R6547ENZ1

R6547KNZ1Nch 650V 47A Power MOSFETDatasheetlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.080ID 47APD 480WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6547KNZ1 Basic ordering unit (

 9.2. Size:304K  inchange semiconductor
r6547knz1.pdf

R6547ENZ1
R6547ENZ1

isc N-Channel MOSFET Transistor R6547KNZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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