R6547ENZ1 Todos los transistores

 

R6547ENZ1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R6547ENZ1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 480 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 4000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO-247

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R6547ENZ1 datasheet

 ..1. Size:2055K  rohm
r6547enz1.pdf pdf_icon

R6547ENZ1

R6547ENZ1 Datasheet Nch 650V 47A Power MOSFET lOutline l TO-247 VDSS 650V RDS(on)(Max.) 0.080 ID 47A PD 480W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tube Packing code C9 Marking R6547ENZ1 Basic ordering unit (

 ..2. Size:303K  inchange semiconductor
r6547enz1.pdf pdf_icon

R6547ENZ1

isc N-Channel MOSFET Transistor R6547ENZ1 FEATURES Drain Current I = 47A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:2038K  rohm
r6547knz1.pdf pdf_icon

R6547ENZ1

R6547KNZ1 Nch 650V 47A Power MOSFET Datasheet lOutline l TO-247 VDSS 650V RDS(on)(Max.) 0.080 ID 47A PD 480W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tube Packing code C9 Marking R6547KNZ1 Basic ordering unit (

 9.2. Size:304K  inchange semiconductor
r6547knz1.pdf pdf_icon

R6547ENZ1

isc N-Channel MOSFET Transistor R6547KNZ1 FEATURES Drain Current I = 47A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

Otros transistores... R8008ANJ , RJ1G08CGN , RJ1G12BGN , R6020KNZ4 , DJR0417 , R6035KNZ , R6035KNZ1 , R6047MNZ1 , 20N50 , R6547KNZ1 , R6576ENZ1 , R6576KNZ1 , RD3G400GN , RD3G500GN , RD3G600GN , RD3H045SP , RD3H080SP .

History: BLF6G38-10G | KP750G

 

 

 

 

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