R6547ENZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6547ENZ1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 480 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 47 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 150 nC
Tiempo de subida (tr): 120 nS
Conductancia de drenaje-sustrato (Cd): 4000 pF
Resistencia entre drenaje y fuente RDS(on): 0.08 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de MOSFET R6547ENZ1
R6547ENZ1 Datasheet (PDF)
r6547enz1.pdf
R6547ENZ1DatasheetNch 650V 47A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.080ID 47APD 480WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6547ENZ1 Basic ordering unit (
r6547enz1.pdf
isc N-Channel MOSFET Transistor R6547ENZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
r6547knz1.pdf
R6547KNZ1Nch 650V 47A Power MOSFETDatasheetlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.080ID 47APD 480WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6547KNZ1 Basic ordering unit (
r6547knz1.pdf
isc N-Channel MOSFET Transistor R6547KNZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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