AP2310S Todos los transistores

 ..1. Size:1564K  allpower
 ap2310s.pdf

AIIP ER AP2310S DATA SHEET N-Channel p wer MOSFET Descripti n The AP2310S uses advanced trench technol y to provide N low gate charge and operation with gate excellent Rosco , voltages as low as 2.5V. This device is suitable for use as a Ba e protection or in other switching application. Schematic Diagram General Features 3A Vos =60V o = ,l Ros(ON

 8.1. Size:56K  ape
 ap2310gg-hf.pdf

AP2310GG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S rug

 8.2. Size:49K  ape
 ap2310gk-hf.pdf

AP2310GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC

 8.3. Size:93K  ape
 ap2310cgn-hf.pdf

AP2310CGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 75m Surface Mount Device ID 3.2A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible

 8.4. Size:58K  ape
 ap2310agn-hf.pdf

AP2310AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 65V D Small Package Outline RDS(ON) 80m Surface Mount Device ID 3A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2310A series are from Advanced Power innovated design and silicon process technology to achieve the lo

 8.5. Size:94K  ape
 ap2310gn-hf.pdf

AP2310GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 90m Surface Mount Device ID 3A S RoHS Compliant SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely e

 8.6. Size:68K  ape
 ap2310gn.pdf

AP2310GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m D Surface Mount Device ID 3A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

 8.7. Size:793K  allpower
 ap2310.pdf

 8.8. Size:1490K  cn vbsemi
 ap2310gg.pdf

AP2310GG www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n