AP4438 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4438
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 11.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 10.5 nC
Tiempo de subida (tr): 6 nS
Conductancia de drenaje-sustrato (Cd): 125 pF
Resistencia entre drenaje y fuente RDS(on): 0.0115 Ohm
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de MOSFET AP4438
AP4438 Datasheet (PDF)
ap4438cgm-hf.pdf
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AP4438CGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o
ap4438bgm-hf.pdf
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AP4438BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 14mD Fast Switching Characteristic ID 10.4AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
ap4438gyt.pdf
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AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAP4438 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-r
ap4438agm-hf.pdf
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AP4438AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 12.5mDD Fast Switching Characteristic ID 11.2AG RoHS Compliant & Halogen-Free SSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
ap4438gyt-hf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desi
ap4438cgm.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP4438CGM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-Free SSSO-8DDescriptionAP4438C series are fr
ap4438gsm-hf.pdf
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AP4438GSM-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODE Simple Drive Requirement BVDSS 30VDDD Good Recovery Time RDS(ON) 11.5mD Fast Switching Performance ID 11.7AGS RoHS Compliant & Halogen-FreeSSO-8SDDescriptionAdvanced Power MOSFETs from APEC provide theSchottky Diodedesigner with the best co
ap4438gm-hf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP4438GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Liste
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