AO3487 Todos los transistores

 

AO3487 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AO3487
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.4 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 4.3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
   Carga de la puerta (Qg): 9.2 nC
   Tiempo de subida (tr): 5.5 nS
   Conductancia de drenaje-sustrato (Cd): 100 pF
   Resistencia entre drenaje y fuente RDS(on): 0.048 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET AO3487

 

AO3487 Datasheet (PDF)

 ..1. Size:254K  aosemi
ao3487.pdf

AO3487
AO3487

AO348730V P-Channel MOSFETGeneral Description Product SummaryVDS-30V The AO3487 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -4.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 9.1. Size:811K  aosemi
ao3480.pdf

AO3487
AO3487

AO348030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3480 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.7Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

 9.2. Size:342K  aosemi
ao3480c.pdf

AO3487
AO3487

AO3480C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:818K  aosemi
ao3485.pdf

AO3487
AO3487

AO348520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3485 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -4Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)

 9.4. Size:818K  aosemi
ao3481.pdf

AO3487
AO3487

AO348130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3481 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge and operation gate ID (at VGS=-10V) -4.0Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


AO3487
  AO3487
  AO3487
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top