IRFS254B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFS254B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 195 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO3PF

Búsqueda de reemplazo de MOSFET IRFS254B

IRFS254B Datasheet (PDF)

..1. Size:648K 1
irfs254b.pdf

November 2001IRFS254B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s

7.1. Size:207K 1
irfs254a.pdf

7.2. Size:234K fairchild semi
irfs254.pdf

IRFS254FEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 16 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 250V Low RDS(ON): 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteris

8.1. Size:256K 1
irfs250a.pdf

IRFS250AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 21.3 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymb

8.2. Size:285K 1
irfs250 irfs251.pdf

8.3. Size:655K fairchild semi
irfs250b.pdf

November 2001IRFS250B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 75 pF)This advanced technology has been especially tailored to Fas

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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