AS2303 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AS2303
Código: S3
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 1.9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Tiempo de encendido (ton): 4 nS
Conductancia de drenaje-sustrato (Cd): 35 pF
Resistencia entre drenaje y fuente RDS(on): 0.19 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET AS2303
AS2303 Datasheet (PDF)
as2303.pdf
AS2303 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.9
as2306.pdf
AS2306 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: A6 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV 20 VDSS-
as2302.pdf
AS2302 N-Channel 20V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: A2 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBVDSS 20 V-
as2304.pdf
N-Channel 30V(D-S) MOSFET AS2304 SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0
as2308.pdf
AS2308 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.9
as2305.pdf
P-Channel MOSFET AS2305SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: A5 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV -20 VDSS-
as2309.pdf
AS2309 P-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 180m@-10V -60V -1.7A 270m@-4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking 18P6 Document ID Issued Date Revised Date Revision Page
as2300.pdf
AS2300 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 32m@2.5V 4.5A 49m@1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking S0. Document ID Issued Date Revised Date Revision
as2301.pdf
AS2301 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: A1 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBVDSS -20 V-
as2307.pdf
P-Channel MOSFET AS2307SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: B 1 1Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage- BV
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