ASDM3080KQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ASDM3080KQ30V N-CHANNEL MOSFETProduct SummaryFeatures 30V,80A R =4.8m (Typ.) @ V =10V V DS 30 VDS(ON) GS R =7.5m (Typ.) @ V =4.5VDS(ON) GS Advanced Trench Technology R DS(on),TYP@ VGS=10 V 4.8 m Provide Excellent R and Low Gate ChargeDS(ON)80 AIDApplication Load Switch PWM ApplicationAbsolute Maximum Ratings (T =25 unless othe

ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

ASDM30P11TD-30V P-Channel MOSFETProduct SummaryFeatures Low FOM RDS(on)Qgd 100% avalanche testedV DS -30 V Easy to use/drive RoHS compliantR DS(on),TYP@ VGS=10 V 6.4 mI D -55 AApplication Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load SwitchPDFN3*3-8Absolute Maximum Ratings TA = 25 u

ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.

ASDM30N55E30V N-CHANNEL MOSFETFeatureProduct Summary100% EAS GuaranteedVDS 30 VGreen Device AvailableSuper Low Gate ChargeRDS(on),typ VGS=10V 4.8 mExcellent CdV/dt effect declineA55IDAdvanced high cell density Trench technologyApplication Power Management in Inverter Systemtop viewDFN3.3*3.3-8Maximum ratings, at T A=25 C, unless othe

ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

ASDM302030V Dual N-Channel MOSFETFeaturesProduct Summary Dual N-Channel,5V Logic Level Control Enhancement modeV 30 V DSS Fast Switching11.5 R mDS(ON)-Max High EffectiveI A D 11.8 Application Power Management in Inverter System Synchronous Rectification top viewASCENDSOP-8NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,LtdASDM3020

ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.

ASDM30N90KQ30V N-Channel MOSFETGeneral Features Product Summary Low Gate Charge Advanced Trench TechnologyVDS 30 V Provide Excellent RDS(ON)RDS(on),Typ.@ VGS=10 V 3.6 m High Power and Current Handling Capability90ID A Application Load Swtich PWM applications Power management1TO-252N-channelAbsolute Maximum Ratings (TA =25C unless o

ASDM30P11TD-30V P-Channel MOSFETProduct SummaryFeatures Low FOM RDS(on)Qgd 100% avalanche testedV DS -30 V Easy to use/drive RoHS compliantR DS(on),TYP@ VGS=10 V 6.4 mI D -55 AApplication Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load SwitchPDFN3*3-8Absolute Maximum Ratings TA = 25 u

ASDM30N55E30V N-CHANNEL MOSFETFeatureProduct Summary100% EAS GuaranteedVDS 30 VGreen Device AvailableSuper Low Gate ChargeRDS(on),typ VGS=10V 4.8 mExcellent CdV/dt effect declineA55IDAdvanced high cell density Trench technologyApplication Power Management in Inverter Systemtop viewDFN3.3*3.3-8Maximum ratings, at T A=25 C, unless othe

ASDM30P09ZB-30V P-Channel MOSFETProduct SummaryGeneral Features R

ASDM305030V N-CHANNEL MOSFETFeatures Product Summary High density cell design for ultra low RdsonV DS 30 V Fully characterized Avalanche voltage and currentR DS(on),TYP@ VGS=10 V 9 m Good stability and uniformity with high EASR DS(on),TYP@ VGS=4.5 V 11.3 m Excellent package for good heat dissipationI D 50 A Special process technology for high ESD

ASDM3010S30V Dual N-Channel MOSFETFeaturesProduct Summary Dual N-Channel,5V Logic Level Control Enhancement modeV DS 30 V Fast Switching High EffectiveR DS(on),TYP@ VGS=10 V 15.5 mApplicationI D 9 A Power Management in Inverter System Synchronous Rectification top viewASCENDSOP-8Maximum ratings, at T j=25 C, unless otherwise specifiedS

ASDM301030V Dual N-Channel MOSFETProduct SummaryFeatures Dual N-Channel,5V Logic Level ControlV 30 V DSS Enhancement mode15 R mDS(ON)-Typ Fast Switching High EffectiveI A D 9 Application Power Management in Inverter System Synchronous Rectification top viewASCENDSOP-8Maximum ratings, at T j=25 C, unless otherwise specifiedSymbol