SML80H12 Todos los transistores

 

SML80H12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SML80H12
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 3050 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm
   Paquete / Cubierta: TO258
     - Selección de transistores por parámetros

 

SML80H12 Datasheet (PDF)

 ..1. Size:26K  semelab
sml80h12.pdf pdf_icon

SML80H12

SML80H12TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 800VID(cont) 11.5ARDS(on) 0.6705.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower

 7.1. Size:26K  semelab
sml80h14.pdf pdf_icon

SML80H12

SML80H14TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 800VID(cont) 13.5ARDS(on) 0.5805.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower

 9.1. Size:19K  semelab
sml80t27.pdf pdf_icon

SML80H12

SML80T27T247clip Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610)NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODE5.38 (0.212)6.20 (0.244)HIGH VOLTAGEPOWER MOSFETS2VDSS 800V1 2 32.87 (0.113)ID(cont) 27A0.40 (0.016)3.12 (0.123) 0.79 (0.031)1.65 (0.065)2.13 (0.084) RDS(on) 0.3001.01 (0.040)1.40 (0.055

 9.2. Size:25K  semelab
sml80b13f.pdf pdf_icon

SML80H12

SML80B13FTO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 800V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 13A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.6502.2

Otros transistores... SML8075HN , SML8090AN , SML8090BN , SML8090HN , SML80A12 , SML80B12 , SML80B13 , SML80B16 , MMIS60R580P , SML80H14 , SML80J25 , SML80J28 , SML80J44 , SML80L27 , SML80S13 , SML80T27 , SSF10N60A .

History: IXTP50N28T | 3SK249

 

 
Back to Top

 


 
.