ASDM4614S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ASDM4614S
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOP8

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ASDM4614S Datasheet (PDF)

..1. Size:464K ascend
asdm4614s.pdf

ASDM4614S40V N A ND P-Channel MOSFETFeatures Product SummaryN-Channel High power and current handing capabilityBVDSS ID Lead free product is acquired RDSON.Typ@10V Surface mount package40V 28m 7AP-ChannelApplication PWM applications BVDSS IDRDSON.Typ@10V Load switch-6A-40V 38m Power management top viewASCENDN-channel P-ch

9.1. Size:436K 1
asdm40n52e-r.pdf

ASDM40N5240V N-Channel MOSFETGeneral Features Product Summary Low On-ResistanceV 40 VDSS 100% avalanche tested4.2 R mDS(ON)-Typ Fast Switching SpeedI 52 A Excellent package for good heat dissipation DApplication DC/DC ConvertersPin1 On board power for server Synchronous rectificationAbsolute Maximum Ratings (T =25 unless otherwise s

9.2. Size:461K 1
asdm40n80q.pdf

ASDM40N80Q40V N-CHANNEL MOSFETFeaturesProduct Summary Low On-ResistanceV 40 V DSS Fast Switching Speed 100% avalanche tested R 3.5 mDS(ON)-Typ@VGS=10V Lead Free and Green DevicesI 80 A DAvailable (RoHS Compliant)Application DC/DC Converters On board power for server Synchronous rectificationtop view DFN5x6-8Absolute Maximum Ratings

9.3. Size:461K ascend
asdm40n80q.pdf

9.4. Size:765K ascend
asdm4410s.pdf

ASDM4410S100V Dual N & P-Channel PowerTrenchFeaturesProduct SummaryN-ChannelV DS 100 VV DS V100 95 95 R DS(on),Typ@ VGS=10 V mR DS(on),Typ@ VGS=10 V m 5 I AI D RDS (ON) = 185m @ VGS = -10VP-ChannelApplicationV DS -100V DC-DC primary bridge 185R DS(on),Typ@ VGS=-10 V m DC-DC Synchronous rectificationI D -4AHot

9.5. Size:354K ascend
asdm4406s.pdf

ASDM4406S30V N-Channel MOSFETFeaturesProduct SummaryHigh EfficiencyLow Dense Cell Design30 VVDSAdvanced trench process technology 9RDS(on),typ VGS=10V mimproved dv/dt capability 11.3RDS(on),typ VGS=4.5V mIDReliable and RuggedA 13 ApplicationNetworking, Load SwtichLED lighting top viewASCENDSOP-8Absolute Maximum Ratings at Tj

9.6. Size:436K ascend
asdm40n52.pdf

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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