CRSS046N08N Todos los transistores

 

CRSS046N08N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CRSS046N08N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 189 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 64 nC
   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 1207 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de MOSFET CRSS046N08N

 

CRSS046N08N Datasheet (PDF)

 ..1. Size:588K  crhj
crst049n08n crss046n08n.pdf

CRSS046N08N
CRSS046N08N

CRST049N08N, CRSS046N08N() SkyMOS1 N-MOSFET 85V, 4.1m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on) 4.1m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100%

 8.1. Size:568K  crhj
crst045n10n crss042n10n.pdf

CRSS046N08N
CRSS046N08N

CRST045N10N, CRSS042N10N() SkyMOS1 N-MOSFET 100V, 3.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)3.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested

 9.1. Size:535K  1
crst037n10n crss035n10n.pdf

CRSS046N08N
CRSS046N08N

CRST037N10N,CRSS035N10N() SkyMOS1 N-MOSFET 100V, 3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on) typ3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested

 9.2. Size:606K  crhj
crst055n08n crss052n08n.pdf

CRSS046N08N
CRSS046N08N

CRST055N08N, CRSS052N08N() SkyMOS1 N-MOSFET 85V, 4.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested1

 9.3. Size:598K  crhj
crst065n08n crss063n08n.pdf

CRSS046N08N
CRSS046N08N

CRST065N08N, CRSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)5.6m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100

 9.4. Size:584K  crhj
crst041n08n crss038n08n.pdf

CRSS046N08N
CRSS046N08N

CRST041N08N, CRSS038N08N() SkyMOS1 N-MOSFET 85V, 3.4m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)3.4m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested1

 9.5. Size:563K  crhj
crst085n15n crss082n15n.pdf

CRSS046N08N
CRSS046N08N

CRST085N15N, CRSS082N15N() SkyMOS1 N-MOSFET 150V, 7m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 150V Extremely low on-resistance RDS(on) RDS(on)7m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100

 9.6. Size:564K  crhj
crst060n10n crss057n10n.pdf

CRSS046N08N
CRSS046N08N

CRST060N10N, CRSS057N10N() SkyMOS1 N-MOSFET 100V, 5.3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)5.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested

 9.7. Size:567K  crhj
crst040n10n crss037n10n.pdf

CRSS046N08N
CRSS046N08N

CRST040N10N, CRSS037N10N() SkyMOS1 N-MOSFET 100V, 3.3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)3.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested

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