16N65MF Todos los transistores

 ..1. Size:495K  chongqing pingwei
 16n65mf.pdf

16N65MF 16 Amps,650 Volts N-CHANNEL MOSFET FEATURE TO-220MF 16A,650V,R =0.45 @V =10V/8A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 16N65MF Drain-Source Voltage V 650 DSS V Gate-Source Voltage V 30 GSS Continu

 8.1. Size:1053K  st
 stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.240 , 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V

 8.2. Size:942K  st
 stl16n65m2.pdf

STL16N65M2 N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STL16N65M2 710 V 0.395 7.5 A Extremely low gate charge 1 Excellent output capacitance (Coss) profile 2 3 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV Applications

 8.3. Size:1099K  st
 stf16n65m5 sti16n65m5 stp16n65m5 stu16n65m5 stw16n65m5.pdf

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.230 , 12 A MDmesh V Power MOSFET in TO-220FP, I PAK, TO-220, IPAK, TO-247 Features TAB TAB VDSS @ RDS(on) Type ID TJmax max 3 2 3 3 2 1 1 2 STF16N65M5 1 TO-220FP TO-220 STI16N65M5 I PAK STP16N65M5 710 V

 8.4. Size:923K  st
 stl16n65m5.pdf

STL16N65M5 N-channel 650 V, 0.270 , 12 A PowerFLAT 8x8 HV MDmesh V Power MOSFET Features VDSS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL16N65M5 710 V

 8.5. Size:938K  st
 std16n65m2.pdf

STD16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID TAB STD16N65M2 710 V 0.36 11 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Fig

 8.6. Size:844K  st
 std16n65m5.pdf

STD16N65M5 Datasheet N-channel 650 V, 0.230 typ., 12 A MDmesh M5 Power MOSFET in a DPAK package Features VDS at Tjmax. RDS(on) max. ID Order codes TAB STD16N65M5 710 V 0.279 12 A 3 2 1 Extremely low RDS(on) DPAK Low gate charge and input capacitance Excellent switching performance D(2, TAB) 100% avalanche tested Applications Switching applications

 8.7. Size:818K  st
 stp16n65m2 stu16n65m2.pdf

 8.8. Size:780K  st
 stf16n65m2.pdf

STF16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF16N65M2 710 V 0.36 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications TO-220FP Switching applications Figure 1.

 8.9. Size:641K  st
 stfu16n65m2.pdf

STFU16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) D STFU16N65M2 650 V 0.36 11 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested 3 2 1 Zener-protected TO-220FP Applications

 8.10. Size:1032K  st
 stb16n65m5 std16n65m5.pdf

STB16N65M5 STD16N65M5 N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFET in D PAK, DPAK Features VDSS @ RDS(on) Type ID TJmax max. STB16N65M5 710 V

 8.11. Size:994K  st
 stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V

 8.12. Size:777K  truesemi
 tsf16n65mr.pdf

TSF16N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 16A,650V,Max.RDS(on)=0.52 @ =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS minimize on-state resistance, provide superior switching Low gate charge(typical 50nC) performance, and withstand high e