20N65NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

20N65NF20 Amps,650 Volts N-CHANNEL MOSFETFEATURETO-220NF 20A,650V,R =0.50@V =10V/10ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT20N65NFDrain-Source Voltage V 650DSSVGate-Source Voltage V 30GSSContin

STF20N65M5, STFI20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in TO-220FP and I2PAKFP packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF20N65M5710 V 0.19 18 ASTFI20N65M53 Worldwide best RDS(on) * area 12 231 Higher VDSS rating and high dv/dt capabilityTO-220FPI2PAKFP Excellent switching

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABVDS @ RDS(on) Order codes ID2TJmax max3321 1STB20N65M5D2PAKI2PAKSTI20N65M5710 V 0.19 18 ATABSTP20N65M5STW20N65M5 Worldwide best RDS(on) * area32

SPP20N65C3, SPA20N65C3SPI20N65C3Cool MOS Power TransistorV 650 VDSFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transconducta

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP20N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP20N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diodeIKP20N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP20N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft anti par

IKB20N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diodeIKP20N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP20N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diod

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW20N65R5Data sheetIndustrial Power ControlIHW20N65R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP20N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP20N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi

IGB20N65S5High speed switching series fifth generationTRENCHSTOPTM 5 high speed soft switching IGBTFeatures and Benefits: CHigh speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maxim

XPTTM 650V IGBT VCES = 650VIXYA20N65C3D1GenX3TM w/Diode IC110 = 20AIXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65B3D1IC110 = 120AGenX3TM w/ Diode VCE(sat) 1.90V tfi(typ) = 107nsExtreme Light Punch throughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFK120N65X2Power MOSFET ID25 = 120AIXFX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264P (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

Preliminary Technical InformationX-Class VDSS = 650VIXTP20N65XMPower MOSFET ID25 = 9A RDS(on) 210m N-Channel Enhancement ModeOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGDSVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG = Gate D = DrainVGSM Transient 40 VS = So

Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH120N65C3IC110 = 120AGenX3TM VCE(sat) 2.8V tfi(typ) = 46nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC Tab

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65C3GenX3TM IC110 = 20AIXYH20N65C3 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-263 AA (IXYA)Symbol Test Conditions Maximum RatingsGEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65C3D1IC110 = 100AGenX3TM w/ Diode VCE(sat) 2.8V tfi(typ) = 46nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ =

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65C3GenX3TM IC110 = 20AIXYH20N65C3 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-263 AA (IXYA)Symbol Test Conditions Maximum RatingsGEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C

XPTTM 650V IGBT VCES = 650VIXYA20N65C3D1GenX3TM w/Diode IC110 = 20AIXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M

Advance Technical InformationX2-Class VDSS = 650VIXTK120N65X2Power MOSFET ID25 = 120AIXTX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS Continuous 30 VPLUS247 (IX

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65B3D1GenX3TM w/Diode IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE = 1M

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH120N65B3IC110 = 120AGenX3TM VCE(sat) 1.90V tfi(typ) = 107nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC T

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsOVERMOLDED TO-220VCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =

UNISONIC TECHNOLOGIES CO., LTD 20N65 Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology isspecialized in allowing a minimum on-state resistance and superior switching performance. It also can withst

N RN-CHANNEL MOSFETJCS20N65EI Package MAIN CHARACTERISTICS ID 20A VDSS 650V Rdson-max0.42 Vgs=10V Qg-Typ 64.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power

N RN-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson-max 0.5 @Vgs=10V Qg-typ 45nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

BRFL20N65 Rev.A May.-2023 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,, Low gate charge, Low Crss , Fast switching. / Applications UPS High efficiency switch mode pow

Silicon N-Channel Power MOSFET R CS20N65F A9H VDSS 650 V General Description ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

20N65D20A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 20.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=0.402 Features Fast switching ESD im

20N6520A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 20.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=0.452 Features Fast switching ESD imp

RU20N65RN-Channel Advanced Power MOSFETFeatures Pin Description 650V/20A, RDS (ON) =400m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDDApplications Dpp D AC/DC Power Conversion i

RU20N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/20A, RDS (ON) =400m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversion

BL20N65 Power MOSFET 1Description Step-Down Converter BL20N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

N N-CHANNEL MOSFET FHF20N65A/ FHP20N65A/FHA20N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 650V Fast switching Rdson-typ 0.35 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C

JFPC20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

JFFC20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

JFAM20N65E 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

OST120N65H4SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4SMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

OST120N65H5SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H5SMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

OST120N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST120N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

OST120N65H4UMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4UMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

PTP20N65A PTA20N65A 650V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 650V 0.38 20A RDS(ON),typ.=0.38 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G TV Main Power D S G D SMPS Power Supply S LCD Panel Power TO-220 TO-220F Ordering Information Packa

SW20N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.31 Low RDS(ON) (Typ 0.31)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 3 General Desc

SW20N65K N-channel Enhanced mode TO-220/TO-220F/TO-3P/TO-262N MOSFET Features TO-220 TO-220F TO-3P TO-262N BVDSS : 650V High ruggedness ID : 20A Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:LED, Charger, PC Power 3 3 3 3 1. Gat

SW20N65K2 N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 37nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 2 3 Application: Charger, LED, PC Power 1. Gate 2. Drain 3. Source 3 General Description This

SW20N65K2 N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 37nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 2 3 Application: Charger, LED, PC Power 1. Gate 2. Drain 3. Source 3 General Description This

Datasheet 20A, 650V, N-Channel Power MOSFET SRM20N65General Description Symbol The Sanrise SRM20N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM20N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

TSF20N65MR650V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with

TSA20N65MR650V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with

Silicon N-Channel Power MOSFET R CS20N65F A9H VDSS 650 V General Description ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

nvertCS20N65F,CS20N65P,CS20N65V,CS20N65WSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and PackageInformationDevice Package MarkingCS20N65F T

FIR20N65AFGPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=75 nC (Typ.). BVDSS=650V,ID=20A G RDS(on) : 0.42 (Max) @VG=10VD S 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly LocationWW = Work

FIR20N65FGN-Channel Power MOSFET-XPIN Connection TO-220FVDSS 650 VID 20 APD(TC=25) 85 WRDS(ON)Typ 0.45GFeaturesDS Fast SwitchinggSchematic dia ram Low ON Resistance(Rdson 0.45 )D Low Gate Charge (Typical Data:65nC) Low Reverse transfer capacitances(Typical: 20pG 100% Single Pulse avalanche energy TestSApplicationsPower switch circuit of adapt

SMF20N65650V N-Channnel MOSFETFeatures 20.0A, 650V, R =0.38@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Va

650V 20A Trench and Field Stop IGBTJJT20N65SCKey performance:TO-263 V =650VCE I =20A@T =100C C V =1.6 VCE(sat)CFeatures:G High ruggedness performance.E 10s short circuit capability. Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

650V 20A Trench and Field Stop IGBTJJT20N65SEKey performance:TO-247 V =650VCE I =20A@T =100C C V =1.6 VCE(sat)Features:G High ruggedness performance.CE 10s short circuit capability. Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

650V 20A Trench and Field Stop IGBTJJT20N65SSKey performance: V =650VCETO-220F I =20A@T =100C C V =1.6 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GCE Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

650V 20A Trench and Field Stop IGBTJJT20N65SYKey performance:TO-220 V =650VCE I =20A@T =100C C V =1.6 VCE(sat)Features: High ruggedness performance.GC 10s short circuit capability.E Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

LNC20N65/LND20N65/LNB20N65Lonten N-channel 650V, 20A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 20ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 58.3 nCg,typenergy.Features Low RDS(on) Low gate charge (t

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*120N65G2P2DRev. 0.9Nov. 2023www.supersemi.com.cnSIW120N65G2P2D650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 120 Atechnology. The SJ-IGBT series provides lowVCE(sa

SPC20N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=20A(Vgs=10V) R max. at 25oC () V =10V 0.40 DS(on) GS Ultra Low Gate Charge Q max. (nC) 95 g Improved dv/dt Capability Q (nC) 28 gs 100% Avalanche Tested Q (nC) 30 gd RoHS compliant Configuration single

SMIRF20N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 20A IRF20N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.5(VGS=10V, ID=10A) on-state resistance, provide superior s

VBZMB20N65Swww.VBsemi.comN-Channel 650-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Reduced trr, Qrr, and IRRMVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) max. () at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss)Qg max. (nC) 106 Low switching losses due to reduced QrrQgs (nC) 14 Ultra low gate charge (Qg)Qgd (nC) 33

VBZMB20N65 www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy rated (UIS)Qgd (nC) 2.7Configura

RoHS DGW20N65CTL COMPLIANT IGBT Modules IGBT Descrete V 650 V CEI 20 A CV I =20A 1.9 V CE(SAT) C Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature

TMA20N65H, TMP20N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA20N65H TO-220F A2

TMA20N65HG,TMW20N65HG Wuxi Unigroup Microelectronics Co.,Ltd 650V N-Channel MOSFET Description 650V N-Channel MOSFET VDMOSFET is a double-diffusion device which the current flows is vertically, and is a voltage-controlled device. Under the control of the appropriate gate voltage, the semiconductor surface is inverted, forming a conductive channel and an appropriate amount of curre

HMG20N65F IGBT Features 650V 20A,V = 1.70 V@20A CE(sat)(typ.) Field Stop IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation Absolute Maxinmun Ratings Symbol Parameter Val

V General Description VDSS 650 ID 20 A HM20N65F, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

MPBQ120N65GSF650V-120A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor drivespositive temperature coefficient in VCEsat Main inverter Low VCEsatfast switching PTC heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBQ120

MPBX20N65EF650V-20A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBP20N65EF MP20N65EF TO-220MPBA20N65EF MP20N65EF TO-220FMPBC20N6

MPVX20N65F SeriesPower MOSFETMPSW60M041FEATURESAPPLICATIONSl BVDSS: 650V, ID=20A l Switch Mode Power Supply (SMPS)l RDS(on) : 0.48(Max) @VGS=10Vl Uninterruptible Power Supply (UPS)l Very Low FOM (RDS(on) *Qg)l Power Factor Correction (PFC)l Excellent stability and uniformityl AC to DC ConvertersDGTO-220F STO-220Ordering InformationType NO. Marking Package

YGF20N65T2,YGK20N65T2YGP20N65T2,YGW20N65T2 650V /20A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 20 A C Short Circuit Rated V I =20A 1.65 V CE(SAT) C Very Low Saturation Voltage: V = 1.65V (Typ.) @ I = 20A CE(SAT) C Soft current turn-off waveforms App

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA20N65C3FEATURESWith TO-220F packagingNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

isc N-Channel MOSFET Transistor SPP20N65C3ISPP20N65C3FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP20N65M5FEATURESTypical R (on)=0.16DSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 V