4N65B Todos los transistores

 ..1. Size:868K  chongqing pingwei
 4n65 4n65f 4n65b 4n65h 4n65g 4n65d.pdf

 0.1. Size:159K  microsemi
 apt94n65b2c6 apt94n65lc6.pdf

APT94N65B2C6 APT94N65LC6 650V 94A 0.035 APT94N65B2C6 Super Junction MOSFET T-Max TO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT94N65LC6 Extreme dv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. I

 0.2. Size:145K  microsemi
 apt94n65b2c3g.pdf

650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Power Semiconductors Super Junction MOSFET T-MaxTM Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi di

 0.3. Size:1447K  jilin sino
 jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf

R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate

 0.4. Size:1598K  jilin sino
 jcs4n65vb jcs4n65rb jcs4n65bb jcs4n65sb jcs4n65cb jcs4n65fb.pdf

N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V Rdson Vgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 0.5. Size:1866K  jilin sino
 jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf

R JCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_ Typ 2.1 Vgs=1 Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low g

 0.6. Size:758K  magnachip
 mdf4n65bth.pdf

MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 0.7. Size:814K  magnachip
 mdis4n65bth.pdf

MDIS4N65B N-Channel MOSFET 650V, 3.65A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 3.65A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for

 0.8. Size:1084K  feihonltd
 fhu4n65b fhp4n65b fhd4n65b fhf4n65b.pdf

 0.9. Size:658K  pipsemi
 psu04n65b psd04n65b.pdf

PSU04N65B PSD04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.9 4.0A RDS(ON),typ.=1.9 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G G Charger D D S SMPS Standby Power S TO-251 TO-252 Ordering Information Part Number Package Br

 0.10. Size:658K  pipsemi
 psa04n65b.pdf

PSA04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.9 4.0A RDS(ON),typ.=1.9 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power G D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PSA0

 0.11. Size:807K  samwin
 sw4n65b.pdf

SW4N65B SW4N65B SAMWIN N-channel MOSFET TO-220F Features BVDSS 650V ID 4.0A High ruggedness RDS(ON) (Max 2.7 )@VGS=10V RDS(ON) 2.7ohm Gate Charge (Typical 11nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3 This tec

 0.12. Size:308K  ubiq
 qm04n65b.pdf

QM04N65B 1 2011-03-14 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM04N65B is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 2.6 4A most of the synchronous buck converter applications . Applications The QM04N65B meet the RoHS and G

 0.13. Size:1977K  first semi
 fir4n65bpg.pdf

FIR4N65BPG Advanced N-Ch Power MOSFET PIN Connection TO-251(I-PAK) General Description FIR4N65BPGis an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state 1 2 3 resistance, pro

 0.14. Size:440K  jiejie micro
 jmpc4n65bj.pdf

JMPC4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON)

 0.15. Size:987K  jiejie micro
 jmpk4n65bj.pdf

JMPK4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON)

 0.16. Size:384K  jiejie micro
 jmpf4n65bj.pdf

JMPF4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON)

 0.17. Size:6964K  cn shikues
 sk04n65b.pdf

SK04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 2.3 4.0A RDS(ON),typ.=2.3 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power Ordering Information Part Number Package TO-251 SK04N65B TO-252 Absolute Maximum Ratings T =25 unless otherwise