4N65G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 4N65G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 22 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 15 nC
   Tiempo de subida (tr): 45 nS
   Conductancia de drenaje-sustrato (Cd): 70 pF
   Resistencia entre drenaje y fuente RDS(on): 2.5 Ohm
   Paquete / Cubierta: TO252

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4N65G Datasheet (PDF)

..1. Size:868K chongqing pingwei
4n65 4n65f 4n65b 4n65h 4n65g 4n65d.pdf

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UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

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0.5. Size:861K cn sinai power
spc4n65g.pdf

SPC4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC () V =10V 2.4DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli

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spe4n65g.pdf

SPE4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC () V =10V 2.4DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli

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sed14n65g.pdf

SED14N65GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =650VDSVoltage and Current Improved Shoot-Through R =300m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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