4N65G Todos los transistores

 ..1. Size:868K  chongqing pingwei
 4n65 4n65f 4n65b 4n65h 4n65g 4n65d.pdf

 0.1. Size:368K  utc
 4n65l-ta3-t 4n65g-ta3-t 4n65l-tf1-t 4n65g-tf1-t 4n65l-tf2-t 4n65g-tf2-t 4n65l-tf3-t 4n65g-tf3-t 4n65l-tf3t-t 4n65g-tf3t-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 0.2. Size:368K  utc
 4n65l-t2q-t 4n65g-t2q-t 4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-e-k08-5060-r 4n65l-tm3-t 4n65g-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 0.3. Size:368K  utc
 4n65l-tms-t 4n65g-tms-t 4n65l-tms2-t 4n65g-tms2-t 4n65l-tms4-t 4n65g-tms4-t 4n65l-tn3-r 4n65g-tn3-r 4n65l-tnd-r 4n65g-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 0.4. Size:368K  utc
 4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-k08-5060-r 4n65g-k08-5060-r 4n65l-t2q-t 4n65g-t2q-t 4n65l-tm3-t 4n65g-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 0.5. Size:861K  cn sinai power
 spc4n65g.pdf

SPC4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC ( ) V =10V 2.4 DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli

 0.6. Size:880K  cn sinai power
 spe4n65g.pdf

SPE4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC ( ) V =10V 2.4 DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli

 0.7. Size:337K  cn sino-ic
 sed14n65g.pdf

SED14N65G N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =650V DS Voltage and Current Improved Shoot-Through R =300m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations