50N06B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 50N06B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 24.5 nC
Tiempo de subida (tr): 380 nS
Conductancia de drenaje-sustrato (Cd): 445 pF
Resistencia entre drenaje y fuente RDS(on): 0.0175 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET 50N06B
50N06B Datasheet (PDF)
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50N06(F,B,H,G,D)50 Amps,60 Volts N-CHANNEL MOSFETFEATURE 50A,60V,R =17.5m@VGS=10V/25ADS(ON)MAXR =20m@VGS=4.5V/25ADS(ON)MAX Low gate charge Low CissTO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capabilityTO-263 TO-252 TO-25150N06B 50N06G 50N06DAbsolute Maximum Ratings(T =25,unless otherwi
kia50n06b.pdf
50A60V50N06BN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =10.5m@ V =10VDS(on) GS Lead free and green device available Low Rds-on to minimize conductive loss High avalanche current2. Applications Power supply UPS Battery management system3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1of 6 Rev 1.1JAN2014
cmd50n06b.pdf
CMD50N06Bwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
yjb150n06bq.pdf
RoHS COMPLIANT YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
