50N06B Todos los transistores

 ..1. Size:521K  chongqing pingwei
 50n06 50n06f 50n06b 50n06h 50n06g 50n06d.pdf

50N06(F,B,H,G,D) 50 Amps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,R =17.5m @VGS=10V/25A DS(ON)MAX R =20m @VGS=4.5V/25A DS(ON)MAX Low gate charge Low C iss TO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capability TO-263 TO-252 TO-251 50N06B 50N06G 50N06D Absolute Maximum Ratings(T =25 ,unless otherwi

 0.1. Size:932K  blue-rocket-elect
 brcs50n06bd.pdf

BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rss Low R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

 0.2. Size:394K  kia
 kia50n06b.pdf

50A 60V 50N06B N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =10.5m @ V =10V DS(on) GS Lead free and green device available Low Rds-on to minimize conductive loss High avalanche current 2. Applications Power supply UPS Battery management system 3.Symbol Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1of 6 Rev 1.1JAN2014

 0.3. Size:513K  jiejie micro
 jmti50n06b.pdf

JMTI50N06B Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,50A Load Switch R

 0.4. Size:1184K  jiejie micro
 jmtk50n06b.pdf

60V, 50A, 13.7m N-channel Power Trench MOSFET JMTK50N06B Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 50 A RDS(ON)_Typ(@VGS=10V 12.2 mW Applications RDS(ON)_Typ(@VGS=4.5V 13.7 mW Load Switch PWM Application

 0.5. Size:860K  cn vbsemi
 cmd50n06b.pdf

CMD50N06B www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

 0.6. Size:456K  cn yangzhou yangjie elec
 yjb150n06bq.pdf

RoHS COMPLIANT YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications

 0.7. Size:1589K  cn apm
 ap50n06bd ap50n06by.pdf

AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R