5N65GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 5N65GS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 3 nS
Conductancia de drenaje-sustrato (Cd): 45 pF
Resistencia entre drenaje y fuente RDS(on): 0.9 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET 5N65GS
5N65GS Datasheet (PDF)
5n65gs.pdf
5N65GS5 Amps,650 Volts N-Channel Super Junction Power MOSFETFEATURETO-252 5A,650V,R =0.90@V =10V/2.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT5N65GSDrain-Source Voltage V 650DSSVGate-Source Voltage V
5n65l-ta3-t 5n65g-ta3-t 5n65l-tf3-t 5n65g-tf3-t 5n65l-tf1-t 5n65g-tf1-t 5n65l-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppli
5n65l-tm3-t 5n65g-tm3-t 5n65l-tn3-r 5n65g-tn3-r 5n65g-tf2-t 5n65l-tf3t-t 5n65g-tf3t-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppli
15n65l-t47-t 15n65g-t47-t 15n65l-ta3-t 15n65g-ta3-t 15n65l-tc3-t 15n65g-tc3-t 15n65l-tf1-t 15n65g-tf1-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en
15n65l-tf2-t 15n65g-tf2-t 15n65l-tf3-t 15n65g-tf3-t 15n65l-tq2-t 15n65g-tq2-t 15n65l-tq2-r 15n65g-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en
5n65a 5n65af 5n65f 5n65g.pdf
RoHS 5N65 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(5A, 650Volts)DESCRIPTIOND The Nell 5N65 is a three-terminal silicon Ddevice with current conduction capabilityof 5A, fast switching speed, low on-stateresistance, breakdown voltage rating of 650V,and max. threshold voltage of 4 volts.G They are designed for use in applications such
siw75n65g2l2a.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2L2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2L2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)
siw75n65g2h2a.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2H2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2H2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)
hckw75n65gh2.pdf
HCKW75N65GH2@Trench-FS Cool-Watt IGBTHCKW75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo
hckz75n65gh2.pdf
HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo
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