7N60TF Todos los transistores

 ..1. Size:542K  chongqing pingwei
 7n60tf.pdf

7N60TF 7 Amps,600 Volts N-CHANNEL Power MOSFET FEATURE TO-220TF 7A,600V,R =1.3 @V =10V/3.5A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 7N60TF Drain-Source Voltage V 600 DSS V Gate-Source Voltage V 30 GSS Cont

 9.1. Size:969K  fairchild semi
 fcu7n60tu.pdf

December 2008 TM SuperFET FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=23nC) lower gate charge performan

 9.2. Size:1228K  fairchild semi
 fcp7n60 fcpf7n60 fcpf7n60ydtu fcpf7n60t fcpf7n60ydtu.pdf

December 2008 TM SuperFET FCP7N60/FCPF7N60/FCPF7N60YDTU Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=25nC) lower gate charge performance. This advan

 9.3. Size:651K  fairchild semi
 fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf

October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially

 9.4. Size:627K  silan
 svf7n60t svf7n60f.pdf

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 9.5. Size:729K  magnachip
 mdp7n60th.pdf

MDP7N60 N-Channel MOSFET 600V, 7A, 1.15 General Description Features The MDP7N60 uses advanced MagnaChip s MOSFET V = 600V DS Technology, which provides low on-state resistance, high V = 660V @ T DS jmax switching performance and excellent quality. I = 7.0A @ V = 10V D GS RDS(ON) 1.15 @ VGS = 10V MDP7N60 is suitable device for SMPS, high Speed switching Applica

 9.6. Size:443K  taitron
 msu7n60f msu7n60t.pdf

600V/7.4A POWER MOSFET (N-Channel) MSU7N60 600V/7.4A Power MOSFET (N-Channel) General Description MSU7N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

 9.7. Size:289K  inchange semiconductor
 mdp7n60th.pdf

isc N-Channel MOSFET Transistor MDP7N60TH FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.15 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno