7N60TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

7N60TF7 Amps,600 Volts N-CHANNEL Power MOSFETFEATURETO-220TF 7A,600V,R =1.3@V =10V/3.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT7N60TFDrain-Source Voltage V 600DSSVGate-Source Voltage V 30GSSCont

December 2008 TMSuperFETFCD7N60 / FCU7N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=23nC) lower gate charge performan

December 2008 TMSuperFETFCP7N60/FCPF7N60/FCPF7N60YDTUFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=25nC) lower gate charge performance. This advan

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

MDP7N60 N-Channel MOSFET 600V, 7A, 1.15 General Description Features The MDP7N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V @ T DS jmaxswitching performance and excellent quality. I = 7.0A @ V = 10V D GS RDS(ON) 1.15 @ VGS = 10V MDP7N60 is suitable device for SMPS, high Speed switching Applica

600V/7.4A POWER MOSFET (N-Channel) MSU7N60 600V/7.4A Power MOSFET (N-Channel) General Description MSU7N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

isc N-Channel MOSFET Transistor MDP7N60THFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno