8N06G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8N06G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 13.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.5 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET 8N06G
8N06G Datasheet (PDF)
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8N06(G,D)7.5 Amps,60 Volts N-CHANNEL MOSFETFEATURE 7.5A,60V,R =82m@V =10V/4ADS(ON)MAX GSR =107m@V =4.5V/4ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityTO-252 TO-2518N06G 8N06DAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol 8N06(G,D) UNITDrain-Source Voltage
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fte08n06g.pdf
FTE08N06G 60V N-Channel MOSFET General Features Fast Switching Speed BVDSS RDS(ON) (Typ.) ID RoHS Compliant Halogen-free available 60V 8.5m 20A Applications Power Management in Inverter System SOP-8 Synchronous Rectification DD D D DG SS S S GOrdering Information Part Number Package Marking Remark FTE08N06G SOP-8 08N06G Halogen Free
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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