M4N65TF Todos los transistores

 ..1. Size:477K  chongqing pingwei
 m4n65tf.pdf

M4N65TF 4 Amps,650 Volts N-CHANNEL MOSFET FEATURE TO-220TF 4A,650V,R =2.3 @V =10V/2A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT M4N65TF Drain-Source Voltage V 650 DSS V Gate-Source Voltage V 30 GSS Continuous

 8.1. Size:646K  agertech
 atm4n65te.pdf

ATM4N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 4A DESCRIPTION The ATM4N65TE is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching

 9.1. Size:130K  jdsemi
 cm4n65f.pdf

 9.2. Size:148K  jdsemi
 cm4n65c.pdf

R CM4N65C www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LD E 2 TO-251 TO-25

 9.3. Size:305K  sanrise-tech
 srm4n65.pdf

Datasheet 4A, 650V, N-Channel Power MOSFET SRM4N65 General Description Symbol The Sanrise SRM4N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 9.4. Size:4587K  desay
 dm4n65e.pdf

N MOS /N-Channel Power MOSFET DM4N65E RoHS FEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY

 9.5. Size:834K  cn hmsemi
 hm4n65k hm4n65i.pdf

HM4N65K/HM4N65I HM4N65K / HM4N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switc

 9.6. Size:1308K  cn hmsemi
 hm4n65r.pdf

HM4N65R General Description VDSS 650 V HM4N65R the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and

 9.7. Size:462K  cn hmsemi
 hm4n65 hm4n65f.pdf

HM4N65 / HM4N65F HM4N65 / HM4N65F 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switch