EMB12P03V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMB12P03V
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 385 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: EDFN3X3
Búsqueda de reemplazo de EMB12P03V MOSFET
- Selecciónⓘ de transistores por parámetros
EMB12P03V datasheet
emb12p03v.pdf
EMB12P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 12m ID 21A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS
emb12p03v.pdf
EMB12P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 12m ID 21A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS
emb12p03g.pdf
EMB12P03G P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.)(VGS= 10V) 10m ID 13A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Vo
emb12n04v.pdf
EMB12N04V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 40V RDSON (MAX.) 12.8m ID 18A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS
Otros transistores... DM12N65C , DM12N65C-F , DM12N65C-2 , EMB03N03HR , EMB09N03V , EMB09P03V , EMB12N04V , EMB12P03G , AO3401 , EMB17A03G , EMB17C03G , EMB20N03V , EMB20P03G , EMB22A04G , EMBA5P06J , EMF02P02H , EMF03N02HR .
History: RTR025N03 | SWD065R68E7T | 2SK2887
History: RTR025N03 | SWD065R68E7T | 2SK2887
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
bs170 datasheet | tip41c | irfp460 | irfz44n mosfet | lm317t datasheet | irf540 | bc337 | ksc1845