AP72T03GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP72T03GH-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 62 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 82 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP72T03GH-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP72T03GH-HF datasheet
ap72t03gh-hf ap72t03gj-hf.pdf
AP72T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G RoHS Compliant & Halogen-Free S Description G D AP72T03 series are from Advanced Power innovated design and silicon S TO-252(H) process technology to
ap72t03gh ap72t03gj.pdf
AP72T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,
ap72t03gp.pdf
AP72T03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
ap72t03gi-hf.pdf
AP72T03GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 62A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device
Otros transistores... EMF20A02G , EMF20B02V , EMF50N03JS , AP2307GN , AP2311GN , AP4034GYT-HF-3 , AP4410M , AP4435GM , AON7506 , AP9579GP , AP9963GP , AP9977GM-HF , AP9985GM-HF , AP9T18GH-HF , FBM75N68P , FBM75N68B , MTA50P01SN3 .
History: SFS06R06GF | SMK830D
History: SFS06R06GF | SMK830D
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