AP9T18GH-HF Todos los transistores

 

AP9T18GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9T18GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO252

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AP9T18GH-HF datasheet

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AP9T18GH-HF

AP9T18GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38A G RoHS Compliant & Halogen-Free S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

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ap9t18gh ap9t18gj.pdf pdf_icon

AP9T18GH-HF

AP9T18GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 38A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedized device design, ultra

 7.1. Size:126K  ape
ap9t18geh ap9t18gej.pdf pdf_icon

AP9T18GH-HF

AP9T18GEH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D G-S Diode embedded BVDSS 20V G Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) rugg

 9.1. Size:60K  ape
ap9t16agh-hf.pdf pdf_icon

AP9T18GH-HF

AP9T16AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fas

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History: AGM402A | 2SK2602 | CM15N50

 

 

 


History: AGM402A | 2SK2602 | CM15N50

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