AP9T18GH-HF Todos los transistores

 

AP9T18GH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9T18GH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de AP9T18GH-HF MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP9T18GH-HF Datasheet (PDF)

 ..1. Size:98K  ape
 ap9t18gh-hf.pdf pdf_icon

AP9T18GH-HF

AP9T18GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38AG RoHS Compliant & Halogen-FreeSDescriptionAP9T18 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest po

 6.1. Size:212K  ape
 ap9t18gh ap9t18gj.pdf pdf_icon

AP9T18GH-HF

AP9T18GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 38AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, ultra

 7.1. Size:126K  ape
 ap9t18geh ap9t18gej.pdf pdf_icon

AP9T18GH-HF

AP9T18GEH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD G-S Diode embedded BVDSS 20VG Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant SDescriptionThe Advanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast switching,TO-252(H)rugg

 9.1. Size:60K  ape
 ap9t16agh-hf.pdf pdf_icon

AP9T18GH-HF

AP9T16AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fas

MOSTRAR MÁS

Otros transistores... AP4034GYT-HF-3 , AP4410M , AP4435GM , AP72T03GH-HF , AP9579GP , AP9963GP , AP9977GM-HF , AP9985GM-HF , 18N50 , FBM75N68P , FBM75N68B , MTA50P01SN3 , MTB028N10QNCQ8 , MTB030N10RQ8 , MTB095N10KRL3 , MTB095N10KRN3 , MTB1D0N03RH8 .

History: JFHM20N60E | WPM3012 | WMM15N65C2 | SWD4N65DA | STH410N4F7-2AG | WML10N60C4 | SP8006

 

 
Back to Top

 


 
.