SSF7N90A Todos los transistores

 

SSF7N90A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF7N90A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 95 W

Tensión drenaje-fuente (Vds): 900 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 94 nC

Conductancia de drenaje-sustrato (Cd): 2070 pF

Resistencia drenaje-fuente RDS(on): 1.8 Ohm

Empaquetado / Estuche: TO3PF

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SSF7N90A Datasheet (PDF)

1.1. ssf7n90a.pdf Size:928K _samsung

SSF7N90A
SSF7N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDS

5.1. ssf7ns60d.pdf Size:544K _silikron

SSF7N90A
SSF7N90A

 SSF7NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.56Ω (typ.) ID 7A ① TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF7NS60D series MOSFETs is a new t

5.2. ssf7ns65uf.pdf Size:449K _silikron

SSF7N90A
SSF7N90A

 SSF7NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.6Ω (typ.) ID 7A ① TO-220F Marking and p in Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF7NS65UF series MOSFETs is a new technology, which

 5.3. ssf7ns70ug.pdf Size:462K _silikron

SSF7N90A
SSF7N90A

 SSF7NS70UG Main Product Characteristics: VDSS 700V RDS(on) 0.7Ω (typ.) ID 7A ① TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF7NS70UG series MOSFETs is a new technology,

5.4. ssf7ns65g.pdf Size:497K _silikron

SSF7N90A
SSF7N90A

 SSF7NS65G Main Product Characteristics: VDSS 650V RDS(on) 0.58Ω (typ.) ID 7A ① TO-251 Mark in g a nd pin Sch ema tic diag r a m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF7NS65G series MOSFETs is a new t

 5.5. ssf7ns70ugx.pdf Size:434K _silikron

SSF7N90A
SSF7N90A

 SSF7NS70UGX Main Product Characteristics: VDSS 700V RDS(on) 0.7Ω (typ.) ID 7A ① IPAK-NX Marking and P in Schematic Diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF7NS70UGX series MOSFETs is a new technology, whic

5.6. ssf7ns60f.pdf Size:569K _silikron

SSF7N90A
SSF7N90A

 SSF7NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.54Ω(typ.) ID 7A ① Marking a nd p in Schematic diagram TO220F Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF7NS60F series MOSFETs is a new techno

5.7. ssf7n60.pdf Size:433K _silikron

SSF7N90A
SSF7N90A

SSF7N60 Features VDSS = 600V ■ Extremely high dv/dt capability ID = 7A ■ Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9Ω (typ.) ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage N–Channel enhancement mode

5.8. ssf7n65f.pdf Size:492K _silikron

SSF7N90A
SSF7N90A

 SSF7N65F Main Product Characteristics: VDSS 650V RDS(on) 1.26Ω (typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃

5.9. ssf7ns65ud.pdf Size:485K _silikron

SSF7N90A
SSF7N90A

 SSF7NS65UD Main Product Characteristics VDSS 650V RDS(on) 0.65Ω (typ.) ID 7A ① TO-252 (DPAK) Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description The SSF7NS65UD series MOSFETs is a new technology, whi

5.10. ssf7ns65ug.pdf Size:467K _silikron

SSF7N90A
SSF7N90A

 SSF7NS65UG Main Product Characteristics: VDSS 650V RDS(on) 0.65Ω (typ.) ID 7A ① TO-251 (IPAK) Marking and pin Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF7NS65UG series MOSFETs is a new technology,

5.11. ssf7n60f.pdf Size:523K _silikron

SSF7N90A
SSF7N90A

 SSF7N60F Main Product Characteristics: VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

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