CS10N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS10N65F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 32 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 48 nC
Tiempo de subida (tr): 29 nS
Conductancia de drenaje-sustrato (Cd): 138 pF
Resistencia entre drenaje y fuente RDS(on): 0.8 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET CS10N65F
CS10N65F Datasheet (PDF)
cs10n65f a9r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs10n65f a9hd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
cs10n65f cs10n65p cs10n65k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65F,CS10N65P,CS10N65K650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65F TO-220F CS1
jcs10n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N RN-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE
jcs10n65f jcs10n65c jcs10n65b jcs10n65s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N R N-CHANNEL MOSFET JCS10N65EI Package MAIN CHARACTERISTICS ID 10 A VDSS 650 V Rdson-max0.85 Vgs=10V Qg-Typ 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
cs10n65fa9hd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
cs10n65fa9r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs10n65ff.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65FF650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65FF TO-220F CS10N65FFAbsolute
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .