CS10N80V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS10N80V
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 78 nC
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 223 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO-3P
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CS10N80V Datasheet (PDF)
cs10n80f cs10n80p cs10n80v cs10n80w.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N80F, CS10N80P,CS10N80V,CS10N80W800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N80F T
jcs10n80fc jcs10n80gdc.pdf
N RN-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS RdsonVgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch
jcs10n80f.pdf
N RN-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS RdsonVgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch
cs10n80 and.pdf
Silicon N-Channel Power MOSFET R CS10N80 AND General Description VDSS 800 V CS10N80 AND, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs10n80f a9d.pdf
Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs10n80 a8d.pdf
Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs10n80fa9d.pdf
Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs10n80a8d.pdf
Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: FDT439N
History: FDT439N
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