CS10N90V
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS10N90V
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 900
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 10
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38
nS
Cossⓘ - Capacitancia
de salida: 202
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.05
Ohm
Paquete / Cubierta:
TO-3P
Búsqueda de reemplazo de CS10N90V
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CS10N90V
Datasheet (PDF)
..1. Size:487K convert
cs10n90v.pdf 
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N90V900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N90V TO-3P CS10N90VAbsolute Maxi
9.1. Size:953K jilin sino
jcs10n80fc jcs10n80gdc.pdf
N RN-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS RdsonVgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch
9.2. Size:1202K jilin sino
jcs10n80f.pdf
N RN-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS RdsonVgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch
9.3. Size:830K jilin sino
jcs10n65f.pdf
R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
9.4. Size:1369K jilin sino
jcs10n60f jcs10n60c.pdf
R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
9.5. Size:1843K jilin sino
jcs10n60bt jcs10n60st jcs10n60ct jcs10n60ft.pdf
N RN-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10VQg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
9.6. Size:1484K jilin sino
jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf
N RN-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE
9.7. Size:2011K jilin sino
jcs10n70c jcs10n70b jcs10n70s jcs10n70f.pdf
N RN-CHANNEL MOSFET JCS10N70C Package MAIN CHARACTERISTICS ID 10A VDSS 700 V Rdson-max 1.10 @Vgs=10V Qg-typ 33.6nC APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS FEATURE
9.8. Size:536K jilin sino
ajcs10n65ct.pdf
N RN-CHANNEL MOSFET AJCS10N65CT MAIN CHARACTERISTICS Package ID 10A VDSS 650V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS Electronic ballast UPS UPS Automotive applications High frequency switching
9.9. Size:741K jilin sino
jcs10n65f jcs10n65c jcs10n65b jcs10n65s.pdf
N R N-CHANNEL MOSFET JCS10N65EI Package MAIN CHARACTERISTICS ID 10 A VDSS 650 V Rdson-max0.85 Vgs=10V Qg-Typ 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
9.10. Size:2289K jilin sino
jcs10n70ch jcs10n70fh.pdf
N R N-CHANNEL MOSFET JCS10N70H Package MAIN CHARACTERISTICS 10A I D 700 V VDSS Rdson-max 1.10 @Vgs=10V 38.0nC Qg-typ APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS T O-220C
9.11. Size:1014K blue-rocket-elect
brcs10n60aa.pdf
BRCS10N60AA Rev.A Sep.-2017 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici
9.12. Size:1021K blue-rocket-elect
brcs10n15dp.pdf
BRCS10N15DP Rev.B Dec.-2018 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features RDS(on) Crss Low RDS(on) ,low gate charge, low Crss , fast switching. HF Product. / Applications DC/DC
9.13. Size:356K crhj
cs10n65 a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
9.14. Size:348K crhj
cs10n70f a9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
9.15. Size:273K crhj
cs10n65f a9r.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
9.16. Size:304K crhj
cs10n80 and.pdf
Silicon N-Channel Power MOSFET R CS10N80 AND General Description VDSS 800 V CS10N80 AND, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
9.17. Size:351K crhj
cs10n65f a9hd.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
9.18. Size:546K crhj
cs10n80f a9d.pdf
Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
9.19. Size:266K crhj
cs10n50 a8r.pdf
Silicon N-Channel Power MOSFET R CS10N50 A8R General Description VDSS 500 V CS10N50 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
9.20. Size:266K crhj
cs10n60 a8r.pdf
Silicon N-Channel Power MOSFET R CS10N60 A8R General Description VDSS 600 V CS10N60 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
9.21. Size:351K crhj
cs10n60f a9hd.pdf
Silicon N-Channel Power MOSFET R CS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
9.22. Size:272K crhj
cs10n50f a9r.pdf
Silicon N-Channel Power MOSFET R CS10N50F A9R General Description VDSS 500 V CS10N50F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
9.23. Size:267K crhj
cs10n65 a8r.pdf
Silicon N-Channel Power MOSFET R CS10N65 A8R General Description VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
9.24. Size:350K crhj
cs10n70 a8d.pdf
Silicon N-Channel Power MOSFET R CS10N70 A8D VDSS 700 V General Description ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
9.25. Size:353K crhj
cs10n60 a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N60 A8HD VDSS 600 V General Description ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
9.26. Size:272K crhj
cs10n60f a9r.pdf
Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
9.27. Size:547K crhj
cs10n80 a8d.pdf
Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
9.28. Size:2795K citcorp
cs10n60fa9hd.pdf
CS10N60FA9HD600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S E
9.29. Size:280K lzg
cs10n60f.pdf
BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
9.30. Size:227K wuxi china
cs10n65fa9hd.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
9.31. Size:353K wuxi china
cs10n60a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N60 A8HD VDSS 600 V General Description ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
9.32. Size:224K wuxi china
cs10n70fa9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
9.33. Size:282K wuxi china
cs10n80fa9d.pdf
Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
9.34. Size:281K wuxi china
cs10n60fa9hd.pdf
Silicon N-Channel Power MOSFET RCS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
9.35. Size:272K wuxi china
cs10n60fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
9.36. Size:350K wuxi china
cs10n70a8d.pdf
Silicon N-Channel Power MOSFET R CS10N70 A8D VDSS 700 V General Description ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
9.37. Size:356K wuxi china
cs10n65a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
9.38. Size:387K wuxi china
cs10n70fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9R General Description VDSS 700 V CS10N70F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
9.39. Size:544K wuxi china
cs10n80a8d.pdf
Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
9.40. Size:273K wuxi china
cs10n65fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
9.41. Size:401K convert
cs10n65ff.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65FF650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65FF TO-220F CS10N65FFAbsolute
9.42. Size:804K convert
cs10n80f cs10n80p cs10n80v cs10n80w.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N80F, CS10N80P,CS10N80V,CS10N80W800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N80F T
9.43. Size:674K convert
cs10n60f cs10n60p.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N60F,CS10N60P600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N60F TO-220F CS10N60FCS
9.44. Size:706K convert
cs10n65f cs10n65p cs10n65k.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65F,CS10N65P,CS10N65K650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65F TO-220F CS1
9.45. Size:418K convert
cs10n60f cs10n60p cs1060k.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N60F,CS10N60P,CS1060K600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N60F TO-220F CS10
Otros transistores... CS10N65F
, CS10N65P
, CS10N65K
, CS10N65FF
, CS10N80F
, CS10N80P
, CS10N80V
, CS10N80W
, IRF3205
, CS11N65F
, CS11N65P
, CS11N70F
, CS11N90V
, CS11N90VF
, CS12N60P
, CS12N65F
, CS12N65P
.
History: STF5NK100Z
| NCE65NF130T
| PSMN8R0-40BS
