CS12N60P Todos los transistores

 ..1. Size:750K  convert
 cs12n60f cs12n60p.pdf

CS12N60F,CS12N60P nvert Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N60F TO-220F CS12N60F CS

 7.1. Size:1072K  jilin sino
 jcs12n60t.pdf

 7.2. Size:1207K  jilin sino
 jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf

N R N-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 7.3. Size:266K  crhj
 cs12n60 a8r.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8R General Description VDSS 600 V CS12N60 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.4. Size:270K  crhj
 cs12n60f a9r.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9R General Description VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.5. Size:354K  crhj
 cs12n60f a9hd.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9HD VDSS 600 V General Description ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 7.6. Size:352K  crhj
 cs12n60 a8h.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8H VDSS 600 V General Description ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.7. Size:356K  crhj
 cs12n60 a8hd.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8HD VDSS 600 V XGeneral Description ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.8. Size:252K  crhj
 cs12n60f a9h.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9H VDSS 600 V General Description ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.9. Size:252K  foshan
 cs12n60f.pdf

 7.10. Size:253K  lzg
 cs12n60.pdf

BR12N60(CS12N60) N-CHANNEL MOSFET/N MOS PFC Purpose These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. , ,

 7.11. Size:270K  wuxi china
 cs12n60fa9r.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9R General Description VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.12. Size:356K  wuxi china
 cs12n60a8hd.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8HD VDSS 600 V XGeneral Description ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.13. Size:192K  wuxi china
 cs12n60fa9h.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9H VDSS 600 V General Description ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.14. Size:354K  wuxi china
 cs12n60fa9hd.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9HD VDSS 600 V General Description ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 7.15. Size:352K  wuxi china
 cs12n60a8h.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8H VDSS 600 V General Description ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po