CS12N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

nvertSuzhou Convert Semiconductor Co ., Ltd.CS12N65F,CS12N65P650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS12N65F TO-220F CS12N65FCS

N RN-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

N N- CHANNEL MOSFET RJCS12N65FC MAIN CHARACTERISTICS Package ID 12 A VDSS 650 V Rdson@Vgs=10V 0.52 Qg 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

nvertSuzhou Convert Semiconductor Co ., Ltd.CS12N65FF650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS12N65FF TO-220F CS12N65FFAbsolute