CS16N65W Todos los transistores

 ..1. Size:511K  convert
 cs16n65f cs16n65p cs16n65w.pdf

nvert CS16N65F,CS16N65P,CS16N65W Suzhou Convert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS1

 7.1. Size:307K  wuxi china
 cs16n65fa9h.pdf

Silicon N-Channel Power MOSFET R CS16N65F A9H VDSS 650 V General Description ID 16 A CS16N65F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.2. Size:625K  convert
 cs16n65f.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N65F 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS16N65F Absolute Max

 8.1. Size:426K  crhj
 cs16n60 a8h.pdf

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.2. Size:306K  crhj
 cs16n60f a9h.pdf

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.3. Size:426K  wuxi china
 cs16n60a8h.pdf

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.4. Size:776K  convert
 cs16n60f cs16n60p.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N60F,CS16N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N60F TO-220F CS16N60F CS