CS20N60P Todos los transistores

 ..1. Size:649K  convert
 cs20n60f cs20n60p.pdf

nvert CS20N60F,CS20N60P Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS20N60F TO-220F CS20N60F CS

 ..2. Size:703K  convert
 cs20n60f cs20n60p cs20n60w cs20n60v.pdf

CS20N60F,CS20N60P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS20N60W,CS20N60V 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS20N60F

 7.1. Size:1458K  jilin sino
 jcs20n60wh.pdf

 7.2. Size:1215K  jilin sino
 jcs20n60fh.pdf

N R N-CHANNEL MOSFET JCS20N60FH Package MAIN CHARACTERISTICS ID 20A VDSS 600V Rdson-max 0.39 Vgs=10V Qg-Typ 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 7.3. Size:437K  crhj
 cs20n60 anh.pdf

Silicon N-Channel Power MOSFET R CS20N60 ANH VDSS 600 V General Description ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.4. Size:434K  crhj
 cs20n60 a8h.pdf

Silicon N-Channel Power MOSFET R CS20N60 A8H VDSS 600 V General Description ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.5. Size:431K  crhj
 cs20n60f a9h.pdf

Silicon N-Channel Power MOSFET R CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.6. Size:109K  china
 cs20n60.pdf

CS20N60 N PD TC=25 300 W 2.38 W/ ID VGS=10V,TC=25 20 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=10A 0.32 0.46 VGS th VDS=VGS,ID=0.25m

 7.7. Size:2676K  citcorp
 cs20n60fa9h.pdf

CS20N60FA9H 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep

 7.8. Size:437K  wuxi china
 cs20n60anh.pdf

Silicon N-Channel Power MOSFET R CS20N60 ANH VDSS 600 V General Description ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.9. Size:399K  wuxi china
 cs20n60fa9h.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto

 7.10. Size:313K  wuxi china
 cs20n60a8h.pdf

Silicon N-Channel Power MOSFET R CS20N60 A8H VDSS 600 V General Description ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po