CS20N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS20N60P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 104 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 76 nC
Tiempo de subida (tr): 44 nS
Conductancia de drenaje-sustrato (Cd): 264 pF
Resistencia entre drenaje y fuente RDS(on): 0.4 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET CS20N60P
CS20N60P Datasheet (PDF)
cs20n60f cs20n60p.pdf
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nvertCS20N60F,CS20N60PSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS20N60F TO-220F CS20N60FCS
cs20n60f cs20n60p cs20n60w cs20n60v.pdf
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CS20N60F,CS20N60P,nvertSuzhou Convert Semiconductor Co ., Ltd.CS20N60W,CS20N60V600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS20N60F
jcs20n60wh.pdf
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N N- CHANNEL MOSFET RJCS20N60WH MAIN CHARACTERISTICS Package ID 20 A VDSS 600 V Rdson@Vgs=10V 0.39 Qg 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
jcs20n60fh.pdf
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N RN-CHANNEL MOSFET JCS20N60FH Package MAIN CHARACTERISTICS ID 20A VDSS 600V Rdson-max 0.39 Vgs=10V Qg-Typ 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
cs20n60 anh.pdf
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Silicon N-Channel Power MOSFET R CS20N60 ANH VDSS 600 V General Description ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs20n60 a8h.pdf
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Silicon N-Channel Power MOSFET R CS20N60 A8H VDSS 600 V General Description ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs20n60f a9h.pdf
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Silicon N-Channel Power MOSFET R CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs20n60.pdf
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CS20N60 N PD TC=25 300 W 2.38 W/ ID VGS=10V,TC=25 20 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=10A 0.32 0.46 VGS th VDS=VGS,ID=0.25m
cs20n60fa9h.pdf
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CS20N60FA9H600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Ep
cs20n60anh.pdf
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Silicon N-Channel Power MOSFET R CS20N60 ANH VDSS 600 V General Description ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs20n60fa9h.pdf
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Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto
cs20n60a8h.pdf
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Silicon N-Channel Power MOSFET R CS20N60 A8H VDSS 600 V General Description ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 15NM70L-TM3-T