CS20N60V Todos los transistores

 

CS20N60V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS20N60V
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 76 nC
   trⓘ - Tiempo de subida: 44 nS
   Cossⓘ - Capacitancia de salida: 264 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-3P

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CS20N60V Datasheet (PDF)

 ..1. Size:703K  convert
cs20n60f cs20n60p cs20n60w cs20n60v.pdf

CS20N60V CS20N60V

CS20N60F,CS20N60P,nvertSuzhou Convert Semiconductor Co ., Ltd.CS20N60W,CS20N60V600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS20N60F

 7.1. Size:1458K  jilin sino
jcs20n60wh.pdf

CS20N60V CS20N60V

N N- CHANNEL MOSFET RJCS20N60WH MAIN CHARACTERISTICS Package ID 20 A VDSS 600 V Rdson@Vgs=10V 0.39 Qg 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 7.2. Size:1215K  jilin sino
jcs20n60fh.pdf

CS20N60V CS20N60V

N RN-CHANNEL MOSFET JCS20N60FH Package MAIN CHARACTERISTICS ID 20A VDSS 600V Rdson-max 0.39 Vgs=10V Qg-Typ 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 7.3. Size:437K  crhj
cs20n60 anh.pdf

CS20N60V CS20N60V

Silicon N-Channel Power MOSFET R CS20N60 ANH VDSS 600 V General Description ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.4. Size:434K  crhj
cs20n60 a8h.pdf

CS20N60V CS20N60V

Silicon N-Channel Power MOSFET R CS20N60 A8H VDSS 600 V General Description ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.5. Size:431K  crhj
cs20n60f a9h.pdf

CS20N60V CS20N60V

Silicon N-Channel Power MOSFET R CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.6. Size:109K  china
cs20n60.pdf

CS20N60V

CS20N60 N PD TC=25 300 W 2.38 W/ ID VGS=10V,TC=25 20 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=10A 0.32 0.46 VGS th VDS=VGS,ID=0.25m

 7.7. Size:2676K  citcorp
cs20n60fa9h.pdf

CS20N60V CS20N60V

CS20N60FA9H600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Ep

 7.8. Size:437K  wuxi china
cs20n60anh.pdf

CS20N60V CS20N60V

Silicon N-Channel Power MOSFET R CS20N60 ANH VDSS 600 V General Description ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.9. Size:399K  wuxi china
cs20n60fa9h.pdf

CS20N60V CS20N60V

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto

 7.10. Size:313K  wuxi china
cs20n60a8h.pdf

CS20N60V CS20N60V

Silicon N-Channel Power MOSFET R CS20N60 A8H VDSS 600 V General Description ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.11. Size:649K  convert
cs20n60f cs20n60p.pdf

CS20N60V CS20N60V

nvertCS20N60F,CS20N60PSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS20N60F TO-220F CS20N60FCS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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