CS2N100D Todos los transistores

 

CS2N100D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS2N100D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 75 W
   Voltaje máximo drenador - fuente |Vds|: 1000 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 16 nC
   Tiempo de subida (tr): 12 nS
   Conductancia de drenaje-sustrato (Cd): 45 pF
   Resistencia entre drenaje y fuente RDS(on): 7.2 Ohm
   Paquete / Cubierta: TO-252

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CS2N100D Datasheet (PDF)

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cs2n100f cs2n100p cs2n100u cs2n100d.pdf

CS2N100D
CS2N100D

nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N100F,CS2N100P,CS2N100U,CS2N100D1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N100F T

 7.1. Size:419K  convert
cs2n100f cs2n100p cs2n100u.pdf

CS2N100D
CS2N100D

nvertCS2N100F,CS2N100P,CS2N100USuzhou Convert Semiconductor Co ., Ltd.1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N100F TO-220F CS

 7.2. Size:395K  convert
cs2n100lf.pdf

CS2N100D
CS2N100D

nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N100LF1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N100LF TO-220F CS2N100LFAbsolut

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