SSH10N80A Todos los transistores

 ..1. Size:256K  1
 ssh10n80a.pdf

N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V Avalanche Rugged Technology RDS(ON) = 0.95 Rugged Gate Oxide Technology ID = 10A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Lower RDS(ON) 0.746 (Typ.) 1 2 3 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RAT

 ..2. Size:211K  samsung
 ssh10n80a.pdf

SSH10N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 700V Low RDS(ON) 1.552 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 6.1. Size:294K  samsung
 ssh10n70 ssh10n80.pdf

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 6.2. Size:263K  semelab
 ssh10n80.pdf

 8.1. Size:205K  samsung
 ssh10n90a.pdf

SSH10N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 0.938 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

 8.2. Size:923K  samsung
 ssh10n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 25 (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value