CS3N100P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS3N100P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 70 W
Voltaje máximo drenador - fuente |Vds|: 1000 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 24 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 53 pF
Resistencia entre drenaje y fuente RDS(on): 5.5 Ohm
Paquete / Cubierta: TO-220
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CS3N100P Datasheet (PDF)
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nvertSuzhou Convert Semiconductor Co ., Ltd. CS3N150F,CS3N150W,CS3N150VF1500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N150F TO-220F CS
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