CS3N150W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS3N150W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 54.5 nC
trⓘ - Tiempo de subida: 22.5 nS
Cossⓘ - Capacitancia de salida: 101 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm
Paquete / Cubierta: TO-247
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CS3N150W Datasheet (PDF)
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Otros transistores... CS2N90P , CS2N90B , CS30N10P , CS30N10U , CS30N10D , CS3N100F , CS3N100P , CS3N150F , AON6380 , CS3N150VF , CS3N50DF , CS3N50DP , CS3N50DD , CS3N50DU , CS3N65F , CS3N65P , CS3N65U .
History: SSM20P02GH | MCH5908 | IAUC80N04S6N036
History: SSM20P02GH | MCH5908 | IAUC80N04S6N036



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