CS3N50DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS3N50DF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9.6 nC
   trⓘ - Tiempo de subida: 5.3 nS
   Cossⓘ - Capacitancia de salida: 32 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-220F

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CS3N50DF Datasheet (PDF)

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cs3n50df cs3n50dp cs3n50dd cs3n50du.pdf

CS3N50DF, CS3N50DP,nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N50DD,CS3N50DU500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N50DF

8.1. Size:250K crhj
cs3n50 b4hy.pdf

Silicon N-Channel Power MOSFET R CS3N50 B4HY General Description VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

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cs3n50 b4.pdf

Silicon N-Channel Power MOSFET R CS3N50 B4 General Description VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

8.3. Size:196K crhj
cs3n50 b3.pdf

Silicon N-Channel Power MOSFET R CS3N50 B3 General Description VDSS 500 V CS3N50 B3, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

8.4. Size:201K crhj
cs3n50 b3hy.pdf

Silicon N-Channel Power MOSFET R CS3N50 B3HY General Description VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25) 35 W RDS(ON)Typ 2.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

8.5. Size:200K wuxi china
cs3n50b3hy.pdf