CS3N50DD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS3N50DD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.3 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: TO-252
CS3N50DD Datasheet (PDF)
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Otros transistores... CS30N10D , CS3N100F , CS3N100P , CS3N150F , CS3N150W , CS3N150VF , CS3N50DF , CS3N50DP , IRF520 , CS3N50DU , CS3N65F , CS3N65P , CS3N65U , CS3N65D , CS3N65LF , 3N65LU , CS3N70F .



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