CS3N65D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS3N65D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 49 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.2 Ohm
Paquete / Cubierta: TO-252
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CS3N65D Datasheet (PDF)
cs3n65f cs3n65p cs3n65u cs3n65d.pdf
nvertCS3N65F,CS3N65P,CS3N65U,CS3N65DSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N65F TO-220F
cs3n65 a4h-g.pdf
Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs3n65a4h-g.pdf
Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs3n65lf 3n65lu.pdf
nvertCS3N65LF,3N65LUSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N65LF TO-220F CS3N65LFCS3N
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: BF1105
History: BF1105
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918