CS3N70D Todos los transistores

 

CS3N70D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS3N70D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 12.4 nC
   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 39 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.1 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET CS3N70D

 

CS3N70D Datasheet (PDF)

 ..1. Size:709K  convert
cs3n70f cs3n70p cs3n70u cs3n70d.pdf

CS3N70D CS3N70D

nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N70F,CS3N70P,CS3N70U,CS3N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N70F TO-220F

 8.1. Size:351K  crhj
cs3n70 a3h-g.pdf

CS3N70D CS3N70D

Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.2. Size:351K  wuxi china
cs3n70a3h-g.pdf

CS3N70D CS3N70D

Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.3. Size:711K  convert
cs3n70hf cs3n70hp cs3n70hu cs3n70hd.pdf

CS3N70D CS3N70D

CS3N70HF, CS3N70HP nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N70HU, CS3N70HD700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N70H

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


CS3N70D
  CS3N70D
  CS3N70D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD

 

 

 
Back to Top