CS3N70HU Todos los transistores

 

CS3N70HU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS3N70HU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 75 W
   Voltaje máximo drenador - fuente |Vds|: 700 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 13.9 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 43 pF
   Resistencia entre drenaje y fuente RDS(on): 3.5 Ohm
   Paquete / Cubierta: TO-251

 Búsqueda de reemplazo de MOSFET CS3N70HU

 

CS3N70HU Datasheet (PDF)

 ..1. Size:711K  convert
cs3n70hf cs3n70hp cs3n70hu cs3n70hd.pdf

CS3N70HU CS3N70HU

CS3N70HF, CS3N70HP nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N70HU, CS3N70HD700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N70H

 8.1. Size:351K  crhj
cs3n70 a3h-g.pdf

CS3N70HU CS3N70HU

Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.2. Size:351K  wuxi china
cs3n70a3h-g.pdf

CS3N70HU CS3N70HU

Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.3. Size:709K  convert
cs3n70f cs3n70p cs3n70u cs3n70d.pdf

CS3N70HU CS3N70HU

nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N70F,CS3N70P,CS3N70U,CS3N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N70F TO-220F

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


CS3N70HU
  CS3N70HU
  CS3N70HU
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top