CS3N80BU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS3N80BU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 70 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 16.5 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 149 pF
Resistencia entre drenaje y fuente RDS(on): 4.8 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de MOSFET CS3N80BU
CS3N80BU Datasheet (PDF)
cs3n80bf cs3n80bp cs3n80bu cs3n80bl cs3n80bk.pdf
CS3N80BF, CS3N80BP nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N80BU ,CS3N80BL,CS3N80BK800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package Marking
jcs3n80v jcs3n80r jcs3n80b jcs3n80s jcs3n80c jcs3n80f jcs3n80v.pdf
N RN-CHANNEL MOSFET JCS3N80C Package MAIN CHARACTERISTICS ID 3.0 A VDSS 800 V Rdson-max 4.9 Vgs=10V Qg-typ 15.4nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
cs3n80 arh.pdf
Silicon N-Channel Power MOSFET R CS3N80 ARH General Description VDSS 800 V CS3N80 ARH, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs3n80 a3.pdf
Silicon N-Channel Power MOSFET R CS3N80 A3 General Description VDSS 800 V CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs3n80 a8.pdf
Silicon N-Channel Power MOSFET R CS3N80 A8 General Description VDSS 800 V CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs3n80f a9.pdf
Silicon N-Channel Power MOSFET R CS3N80F A9 General Description VDSS 800 V CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs3n80 a4.pdf
Silicon N-Channel Power MOSFET R CS3N80 A4 General Description VDSS 800 V CS3N80 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs3n80fa9.pdf
CS3N80FA9800V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Epox
cs3n80a8.pdf
Silicon N-Channel Power MOSFET R CS3N80 A8 General Description VDSS 800 V CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs3n80a4.pdf
Silicon N-Channel Power MOSFET R CS3N80 A4 General Description VDSS 800 V CS3N80 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs3n80a3.pdf
Silicon N-Channel Power MOSFET R CS3N80 A3 General Description VDSS 800 V CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
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