CS3N90F Todos los transistores

 

CS3N90F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS3N90F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.8 Ohm

Encapsulados: TO-220F

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CS3N90F datasheet

 ..1. Size:624K  crhj
cs3n90f a9h.pdf pdf_icon

CS3N90F

Silicon N-Channel Power MOSFET R CS3N90F A9H General Description VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25 ) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 ..2. Size:688K  convert
cs3n90f cs3n90p cs3n90b.pdf pdf_icon

CS3N90F

nvert Suzhou Convert Semiconductor Co ., Ltd. CS3N90F, CS3N90P,CS3N90B 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N90F TO-220F CS3N90

 0.1. Size:622K  wuxi china
cs3n90fa9h.pdf pdf_icon

CS3N90F

Silicon N-Channel Power MOSFET R CS3N90F A9H General Description VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25 ) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.1. Size:633K  crhj
cs3n90 a3h.pdf pdf_icon

CS3N90F

Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

Otros transistores... CS3N70HP, CS3N70HU, CS3N70HD, CS3N80BF, CS3N80BP, CS3N80BU, CS3N80BL, CS3N80BK, AO4468, CS3N90P, CS3N90B, CS40N20F, CS40N20P, CS4N100F, CS4N100V, CS4N100VF, CS4N150V

 

 

 


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