CS3N90P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS3N90P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 70 W
Voltaje máximo drenador - fuente |Vds|: 900 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 21 nC
Tiempo de subida (tr): 16 nS
Conductancia de drenaje-sustrato (Cd): 56 pF
Resistencia entre drenaje y fuente RDS(on): 4.8 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET CS3N90P
CS3N90P Datasheet (PDF)
cs3n90f cs3n90p cs3n90b.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N90F, CS3N90P,CS3N90B900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N90F TO-220F CS3N90
cs3n90 a3h.pdf
Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs3n90f a9h.pdf
Silicon N-Channel Power MOSFET R CS3N90F A9H General Description VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs3n90 a8.pdf
Silicon N-Channel Power MOSFET R CS3N90 A8 General Description VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs3n90 a4h.pdf
Silicon N-Channel Power MOSFET R CS3N90 A4H General Description VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs3n90fa9h.pdf
Silicon N-Channel Power MOSFET R CS3N90F A9H General Description VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs3n90a3h1-g.pdf
Silicon N-Channel Power MOSFET R CS3N90 A3H1-G General Description VDSS 900 V CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs3n90a3h.pdf
Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs3n90a4h.pdf
Silicon N-Channel Power MOSFET R CS3N90 A4H General Description VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs3n90a8.pdf
Silicon N-Channel Power MOSFET R CS3N90 A8 General Description VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
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